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MIT researchers say nanoscale 3D transistors made from ultrathin semiconductor materials promise more efficient electronics; quantum mechanics offers a path beyond silicon limits

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MIT researchers have developed a nanoscale transistor that could potentially pave the way for electronics more efficient than silicon-based devices.

The design leverages a quantum mechanical phenomenon known as quantum tunneling, allowing electrons to travel through an energy barrier rather than over it.

By relying on tunneling transistors, the device achieves a sharp transition between “off” and “on” states with lower voltage, something silicon transistors cannot do as efficiently.